Title :
Spectroscopic analysis of the chemical structure at the CdS/Cu(In,Ga)Se2 interface in high-efficiency solar cell devices
Author :
Pookpanratana, S. ; Repins, I. ; Bär, M. ; Félix, R. ; Blum, M. ; Weinhardt, L. ; Yang, W. ; Denlinger, J.D. ; Contreras, M.A. ; Heske, C.
Author_Institution :
Dept. of Chem., Univ. of Nevada, Las Vegas, NV, USA
Abstract :
High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.
Keywords :
Auger electron spectra; II-VI semiconductors; X-ray emission spectra; X-ray photoelectron spectra; buffer layers; cadmium compounds; chemical structure; copper compounds; gallium compounds; indium compounds; interface structure; semiconductor thin films; solar cells; ternary semiconductors; thin film devices; wide band gap semiconductors; CdS-CuInGaSe2; X-ray emission spectroscopy; X-ray excited Auger electron spectroscopy; XAES; XPS; buffer layer; chalcopyrite absorber; chemical bath deposition; chemical properties; chemical structure; high-efficiency solar cell devices; soft X-ray spectroscopy; spectroscopic analysis; surface-sensitive X-ray photoelectron spectroscopy; time 0 min; time 12.5 min; time 4 min; Chemical analysis; Conductive films; Conductivity; Electrodes; Epitaxial growth; Glass; Molecular beam epitaxial growth; Spectroscopy; Substrates; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411203
