Title :
Percolation Phenomena in Silicon - Based Nanocrystalline Systems
Author :
Lepadatu, A.M. ; Rusnac, E. ; Stavarache, I.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
The present paper analyzes the appearance of voltage percolation thresholds in the current-voltage characteristics measured on silicon-based nanocrystalline systems that present random space distribution of the nanocrystallites. This percolation phenomenon is explained on the basis of the probability of tunneling under applied bias and is related to the samples microstructure.
Keywords :
electrical conductivity; elemental semiconductors; nanocomposites; nanostructured materials; percolation; porous semiconductors; silicon; silicon compounds; tunnelling; current-voltage characteristics; percolation phenomena; random space distribution; silicon-based nanocrystalline systems; tunneling probability; voltage percolation thresholds; Amorphous silicon; Annealing; Current measurement; Electrodes; Electron microscopy; Microstructure; Semiconductor films; Threshold voltage; Tunneling; Voltage measurement; nanocrystalline silicon; percolation;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519789
