DocumentCode
3440065
Title
Percolation Phenomena in Silicon - Based Nanocrystalline Systems
Author
Lepadatu, A.M. ; Rusnac, E. ; Stavarache, I.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest
Volume
2
fYear
2007
fDate
Oct. 15 2007-Sept. 17 2007
Firstpage
575
Lastpage
578
Abstract
The present paper analyzes the appearance of voltage percolation thresholds in the current-voltage characteristics measured on silicon-based nanocrystalline systems that present random space distribution of the nanocrystallites. This percolation phenomenon is explained on the basis of the probability of tunneling under applied bias and is related to the samples microstructure.
Keywords
electrical conductivity; elemental semiconductors; nanocomposites; nanostructured materials; percolation; porous semiconductors; silicon; silicon compounds; tunnelling; current-voltage characteristics; percolation phenomena; random space distribution; silicon-based nanocrystalline systems; tunneling probability; voltage percolation thresholds; Amorphous silicon; Annealing; Current measurement; Electrodes; Electron microscopy; Microstructure; Semiconductor films; Threshold voltage; Tunneling; Voltage measurement; nanocrystalline silicon; percolation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-0847-4
Type
conf
DOI
10.1109/SMICND.2007.4519789
Filename
4519789
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