Title :
Optical absorption and electrical conductivity in amorphous In-Zn-O: A new TCO for CIGS PV
Author :
Perkins, J.D. ; Gennett, T. ; van HEST, M.F.A.M. ; Gedvilas, L.M. ; Ginley, D.S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We report the coupled optical and electrical properties of a-IZO films as a function of both the metals composition and the %O2 in the Ar/O2 sputter gas mix. In particular, a-IZO films with conductivity ¿ > 2000 S/cm can be grown for a broad range of metals compositions (60 to 85 at.% In) as long as the corresponding optimal oxygen level is used in the deposition. The amount of oxygen required increases with increasing indium content. When too much oxygen is used, the a-IZO remains clear but the conductivity is reduced due to a decreased carrier concentration. Whereas, when too little oxygen is used, the conductivity is reduced due to decreased electron mobility and there is a concurrent increase in the optical absorption from 400 to 1000 nm which renders the oxygen deficient a-IZO samples gray.
Keywords :
amorphous semiconductors; carrier density; electrical conductivity; electron mobility; indium compounds; semiconductor thin films; sputtered coatings; transparency; wide band gap semiconductors; InZnO; amorphous films; carrier concentration; electrical conductivity; electron mobility; metal compositions; optical absorption; optimal oxygen level; oxygen deficient; sputter gas mixture; transparent conducting oxide; wavelength 400 nm to 1000 nm; Absorption; Amorphous materials; Argon; Conductive films; Conductivity; Electron mobility; Electron optics; Indium; Optical coupling; Optical films;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411220