DocumentCode
3440358
Title
Scaling, power, and the future of CMOS
Author
Horowitz, Mark ; Alon, Elad ; Patil, Dinesh ; Naffziger, Samuel ; Kumar, Rajesh ; Bernstein, Kerry
Author_Institution
Stanford Univ., CA
fYear
2005
fDate
5-5 Dec. 2005
Lastpage
15
Abstract
This paper briefly reviews the forces that caused the power problem, the solutions that were applied, and what the solutions tell us about the problem. As systems became more power constrained, optimizing the power became more critical; viewing power reduction from an optimization perspective provides valuable insights. Section III describes these insights in more detail, including why Vdd and Vth have stopped scaling. Section IV describes some of the low power techniques that have been used in the past in the context of the optimization framework. This framework also makes it easy to see the impact of variability, which is discussed in more detail in section V along with the adaptive mechanisms that have been proposed and deployed to minimize the energy cost. Section VI describes possible strategies for dealing with the slowdown in gate energy scaling, and the final section concludes by discussing the implications of these strategies for device designers
Keywords
CMOS integrated circuits; low-power electronics; power supply circuits; CMOS technology; gate energy scaling; low power techniques; power reduction; power scaling; CMOS process; CMOS technology; Constraint optimization; Leakage current; MOS devices; Microprocessors; Power generation; Switches; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609253
Filename
1609253
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