Title :
Etching of monocrystalline CuInSe2 samples
Author :
Shih, Jeanne-Louise ; Chen, Yi ; Shih, Ishiang
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
In the fabrication of CIS and CIGS cells, the absorber layers are often etched in a KCN solution prior to the deposition of buffered and window layers. It is possible that cell performance may be improved further by removing a thin surface absorber layer after the KCN etching. In the present project, the variation of etching rate with different etching solution concentrations applied to the bulk CuInSe2 samples is being studied.
Keywords :
cells (electric); copper compounds; etching; gallium compounds; indium compounds; potassium compounds; CuInGaSe; CuInSe2; absorber layers; buffered layer; etching solution concentrations; monocrystalline samples; window layer; Chemicals; Computational Intelligence Society; Containers; Etching; Fabrication; Glass; Methanol; Physics; Surface morphology; Water;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411228
