A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

Author

Inumiya, Seiji ; Akasaka, Yasushi ; Matsuki, Takeo ; Ootsuka, Fumio ; Torii, Kazuyoshi ; Nara, Yasuo

Author_Institution

Semicond. Leading Edge Technol., Inc., Tsukuba

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

23

Lastpage

26

Abstract

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm²/Vs @ 0.8MV/cm (86% of thermal SiO₂), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed

Keywords

dielectric thin films; electron mobility; hafnium compounds; low-power electronics; nitridation; nitrogen compounds; silicon alloys; tantalum alloys; thermal stability; 1000 C; EOT; TaSi-HfSiON; equivalent oxide thickness; gate dielectrics; gate stacks; gate-first fabrication; high electron mobility; hp45 LOP devices; interfacial layer growth; plasma nitridation; spike annealing; Annealing; Atomic layer deposition; Dielectrics; Electron mobility; Hafnium oxide; Nitrogen; Plasma properties; Plasma temperature; Presence network agents; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609256

Filename

1609256