Title :
Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability
Author :
Hegde, R.I. ; Triyoso, D.H. ; Tobin, P.J. ; Kalpat, S. ; Ramon, M.E. ; Tseng, H.-H. ; Schaeffer, J.K. ; Luckowski, E. ; Taylor, W.J. ; Capasso, C.C. ; Gilmer, D.C. ; Moosa, M. ; Haggag, A. ; Raymond, M. ; Roan, D. ; Nguyen, J. ; La, L.B. ; Hebert, E. ; Co
Author_Institution :
Adv. Products Res. & Dev. Lab., Freescale Semicond., Inc., Austin, TX
Abstract :
For the first time we report on the development of a novel hafnium zirconate (HfZrOx) gate dielectric with a TaxCy metal gate. Compared to HfO2, the new HfZrOx gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher drive current, (4) lower NMOS Vt, (5) reduced C-V hysteresis, (6) lower interface state density, (7) superior wafer-level thickness uniformity, and (8) longer PBTI lifetime. We attribute these improvements to a microstructure that is modified by addition of Zr to HfO2
Keywords :
MIS structures; crystal microstructure; high-k dielectric thin films; reliability; HfZrOx; NMOS; TaxCy; charge trapping; drive current; gate dielectric; hafnium zirconate; long PBTI lifetime; low interface state density; metal gate; microstructure; reduced C-V hysteresis; transconductance; wafer-level thickness uniformity; Annealing; CMOS technology; Capacitance-voltage characteristics; Hafnium oxide; High-K gate dielectrics; Hysteresis; MOSFETs; Microstructure; Photonic band gap; Zirconium;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609259
