Title :
Lithography for manufacturing of sub-65nm nodes and beyond
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
Lithography is facing unprecedented difficulties to go beyond the 65-nm node with 90-nm half pitch. This presentation shows the types of lithography combined with necessary resolution enhancement techniques to handle the 65-, 45-, 32-, and 22-nm nodes. The pros and cons, feasibility for manufacturing, and economical impacts of these technologies will be compared
Keywords :
immersion lithography; nanotechnology; 22 to 65 nm; 90 nm; immersion lithography; nanotechnology; resolution enhancement; Apertures; Focusing; Lenses; Lithography; Manufacturing; Optical imaging; Random access memory; Resists; Semiconductor device manufacture; Surfaces;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609263
