Title :
InP-based logic gates for low power monolithic optoelectronic circuits [InGaAs/InAlAs/InP]
Author :
Brennemann, A. ; Bushehri, E. ; Daumann, W. ; Agethen, M. ; Bertenburg, R.M. ; Brockerhoff, W. ; Staroselsky, V. ; Bratov, V. ; Schlichter, T. ; Tegude, F.-J.
Author_Institution :
Dept. of Solid State Electron., Gerhard-Mercator-Univ., Duisburg, Germany
Abstract :
This paper describes the InP-based HFET technology for the implementation of high bitrate logic gates. A novel logic gate configuration is presented based on depletion mode HFETs (DHFET) using a nonlinear negative feedback (NNFB) for optimized high speed operation. The NNFB increases the switching speed of the gates while reducing the logic HIGH output level. The functionality of this logic design approach is demonstrated in InP with an 11-stage inverter chain and an output buffer. The realization of a ring oscillator and an edge-triggered D-flip-flop are currently in progress
Keywords :
III-V semiconductors; aluminium compounds; circuit feedback; field effect logic circuits; gallium arsenide; high-speed integrated circuits; indium compounds; logic gates; optical fibre communication; optical receivers; HFET technology; InGaAs-InAlAs-InP; depletion mode HFETs; edge-triggered D-flip-flop; high bitrate logic gates; inverter chain; logic HIGH output level; logic gate configuration; low power monolithic optoelectronic circuits; nonlinear negative feedback; optimized high speed operation; output buffer; ring oscillator; switching speed; Bit rate; Boolean functions; Data structures; HEMTs; Indium phosphide; Inverters; Logic design; Logic gates; MODFETs; Negative feedback;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.814016
