Title :
Low temperature electrodeposition of zinc oxide layers as transparent conducting oxide window layers for CIGS solar cells
Author :
Rousset, Jean ; Lincot, Daniel
Author_Institution :
Inst. of R&D of Photovoltaic Energy (IRDEP), Chimie ParisTech, Chatou, France
Abstract :
Electrodeposition of zinc oxide layers has been carried out in simple aqueous solutions at 80°C in presence of zinc ions and dissolved oxygen. Extrinsic n type doping has been proven to be effective by anionic substitution of oxygen by chlorine, using chloride containing electrolytes. Doping level upper values up to 9.1019 cm-3 have been obtained, associated with lateral resistivies in the 2-5 10-3 ¿.cm. Optical transmission and Raman spectra confirm extrinsic doping. Prototype devices with record efficiency of 15.8% on small area (0.1 cm2) has been fabricated with ED-ZnO:Cl as proof of concept of using electrodeposited TCO layers as an alternative to vacuum based present technologies. Time stability is identified as a key issue for future development.
Keywords :
II-VI semiconductors; Raman spectra; cadmium compounds; chlorine; electrodeposition; electrolytes; gallium compounds; indium compounds; semiconductor doping; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; CIGS solar cells; CdInGaSe2; Raman spectra; ZnO:Cl; anionic substitution; dissolved oxygen; doping level; electrolytes; extrinsic n type doping; low temperature electrodeposition; optical transmission; temperature 80 degC; transparent conducting oxide window layers; zinc ions; zinc oxide layers; Conductive films; Doping; Electrodes; Particle beam optics; Photovoltaic cells; Photovoltaic systems; Research and development; Solar power generation; Temperature; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411242
