Author :
Roberts, D. ; Johnstone, W. ; Sanchez, H. ; Mandhana, Om ; Spilo, D. ; Hayden, J. ; Travis, E. ; Melnick, B. ; Celik, M. ; Min, Byoung Woon ; Edgerton, J. ; Raymond, M. ; Luckowski, E. ; Happ, C. ; Martinez, A. ; Wilson, B. ; Leung, Pak ; Garnett, T. ; Go
Abstract :
A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption
Keywords :
MIM devices; capacitors; microprocessor chips; silicon-on-insulator; 90 nm; decoupling capacitor; metal-insulator-metal capacitor; microprocessors; silicon-on-insulator; Capacitance; Copper; Leakage current; MIM capacitors; Metal-insulator structures; Microprocessors; Power grids; System performance; System-on-a-chip; Voltage;
