• DocumentCode
    3440772
  • Title

    Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor

  • Author

    Roberts, D. ; Johnstone, W. ; Sanchez, H. ; Mandhana, Om ; Spilo, D. ; Hayden, J. ; Travis, E. ; Melnick, B. ; Celik, M. ; Min, Byoung Woon ; Edgerton, J. ; Raymond, M. ; Luckowski, E. ; Happ, C. ; Martinez, A. ; Wilson, B. ; Leung, Pak ; Garnett, T. ; Go

  • Author_Institution
    Freescale Semicond. Inc., Austin, TX
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    72
  • Lastpage
    75
  • Abstract
    A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption
  • Keywords
    MIM devices; capacitors; microprocessor chips; silicon-on-insulator; 90 nm; decoupling capacitor; metal-insulator-metal capacitor; microprocessors; silicon-on-insulator; Capacitance; Copper; Leakage current; MIM capacitors; Metal-insulator structures; Microprocessors; Power grids; System performance; System-on-a-chip; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609269
  • Filename
    1609269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3440772