Title :
High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node
Author :
Fox, R. ; Hinsinger, O. ; Richard, E. ; Sabouret, E. ; Berger, T. ; Goldberg, C. ; Humbert, A. ; Imbert, G. ; Brun, P. ; Ollier, E. ; Maurice, C. ; Guillermet, M. ; Monget, C. ; Plantier, V. ; Bono, H. ; Zaleski, M. ; Mellier, M. ; Jacquemin, J.P. ; Flake
Author_Institution :
Freescale Semicond., Crolles
Abstract :
An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliability, and RC performance data are presented for the fully-integrated, improved TFHM 300mm ULK backend
Keywords :
low-k dielectric thin films; masks; nanotechnology; porous materials; 300 mm; 45 nm; 65 nm; backend integration architecture; reliability; trench first hard mask; ultra low-k material insertion; yield; Conductivity; Copper; Dielectric constant; Dielectric materials; Electronic mail; Etching; Inorganic materials; Lithography; Metallization; Resists;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609272
