Title :
A universal smart control IC for high-power IGBT applications
Author :
Herzer, R. ; Schimanek, E. ; Bokeloh, Ch ; Lehmann, J.
Author_Institution :
SEMIKRON Elektronik GmbH, Nurnberg, Germany
Abstract :
Increasing electrical requirements to more reliable and sophisticated driver technology to turn on and turn off IGBT or MOSFET power semiconductors, a new universal smart control integrated circuit (IC) for IGBT-Intelligent Power Modules (IPM) is presented. It is usable for high-power applications up to 3,500 V for several hundred amperes and frequencies up to 50 kHz. The concept includes several driver, protection and monitor functions, such as a short pulse suppression, a mutual interlock of IGBTs, an undervoltage monitoring of the operating voltage, an optional VCE-temperature- and current-monitoring of the IGBT and a common error processing. The potential separation and the specific gate driver stages are separated. The IC is designed and manufactured in a high voltage CMOS technology. This paper comprises a detailed discussion of customers advantages due to the implementation of the SKIC2001 in terms of reliability, flexibility of control and increasing performance when paralleling high power modules
Keywords :
CMOS integrated circuits; bridge circuits; driver circuits; insulated gate bipolar transistors; intelligent control; mixed analogue-digital integrated circuits; monitoring; power integrated circuits; power transistors; protection; 3500 V; 50 kHz; ASIC; HV CMOS technology; IGBT-intelligent power modules; SKIC2001; current-monitoring; driver technology; error processing; halfbridge configuration; high-power IGBT applications; monitor functions; mutual interlock; power semiconductors; protection functions; reliability; short pulse suppression; undervoltage monitoring; universal smart control IC; Application specific integrated circuits; CMOS technology; Driver circuits; Insulated gate bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Monitoring; Multichip modules; Semiconductor device reliability; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.814040
