Title :
High performance nanocrystalline-Si TFT fabricated at 150/spl deg/ C using ICP-CVD
Author :
Han, Sang-Myeon ; Park, Joong-Hyun ; Shin, Hee-Sun ; Choi, Young-Hwan ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
Abstract :
Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) were fabricated using ICP-CVD at 150degC. The fabricated nc-Si TFT exhibits high field effect mobility exceeding 22cm2/Vs and a low sub-threshold slope of 0.45V/dec. The nc-Si film deposited 150degC as an active layer of the TFT shows good crystallinity more than 70% and the gate insulator SiO2 film deposited by ICP-CVD at 150degC shows good electrical characteristics such as flat band voltage of -1.8V and breakdown voltage of 6.2MV/cm
Keywords :
flexible electronics; nanostructured materials; plasma CVD; silicon compounds; thin film transistors; 150 C; SiO2; high field effect mobility; inductively coupled plasma chemical vapor deposition; nanocrystalline silicon thin film transistors; Active matrix liquid crystal displays; Circuits; Crystallization; Electric variables; Plasma chemistry; Plasma density; Plasma properties; Semiconductor films; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609282
