Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

Author

Weber, O. ; Bogumilowicz, Y. ; Ernst, T. ; Hartmann, J.-M. ; Ducroquet, F. ; Andrieu, F. ; Dupré, C. ; Clavelier, L. ; Le Royer, C. ; Cherkashin, N. ; Hytch, M. ; Rouchon, D. ; Dansas, H. ; Papon, A.-M. ; Carron, V. ; Tabone, C. ; Deleonibus, S.

Author_Institution

CEA-LETI, Grenoble

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

137

Lastpage

140

Abstract

Epitaxial strained Si and Ge n- and p-MOSFETs with a TiN/HfO₂ gate stack were fabricated with the same process for a dual channel integration scheme. Compared to the HfO₂/Si reference, X1.7 strained Si electron and X9 strained Ge hole mobility gains are demonstrated, achieving symmetric n- and p-MOSFET I_Dsat performance. This X9 strained Ge hole mobility enhancement highly exceeds previous reported results on Ge pMOSFETs with high-k dielectrics. For the first time, such a hole mobility enhancement, theoretically predicted and experimentally reported with thick SiO₂ gate dielectrics, is demonstrated with a thin high-k gate dielectric (EOT=14Aring)

Keywords

CMOS integrated circuits; MOSFET; dielectric materials; electron mobility; germanium; hafnium compounds; hole mobility; silicon compounds; titanium compounds; Ge; SiO₂; TiN-HfO₂; electron mobility; high mobility dual channel CMOS; hole mobility enhancement; metal gate stack; strained MOSFET; Dielectric materials; Electron mobility; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609288

Filename

1609288