Title :
Long retention and low voltage operation using IrO/sub 2/HfAlO/HfSiO/HfalO gate stack for memory application
Author :
Wang, Y.Q. ; Singh, P.K. ; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, Albert ; Hwang, W.S. ; Chen, J.H. ; Wang, S.J. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., National Univ. of Singapore
Abstract :
We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfXIO and p-type metal gate IrO2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year DeltaVth decay ratio within 18%, higher erasing speed with DeltaVth of 3V within 0.5ms at Vg equiv -12V, and lower operation voltage as well as lower reading voltage, compared to other contending device structures
Keywords :
aluminium compounds; electric properties; hafnium compounds; iridium compounds; memory architecture; semiconductor devices; silicon compounds; -12 V; 0.5 ms; 3 V; IrO2-HfAlO-HfSiO-HfAlO; advanced memory structure; electrical properties; gate stack; high-k dielectric stack; long retention operation; low voltage operation; memory application; trapping capability; work function; Annealing; Application software; Argon; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low voltage; Plasma properties; Sputtering; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609295
