Title :
Large current SiC power devices for automobile applications
Author :
Nakamura, T. ; Sasagawa, M. ; Nakano, Y. ; Otsuka, T. ; Miura, M.
Author_Institution :
ROHM Co., Ltd., Kyoto, Japan
Abstract :
The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.
Keywords :
automotive electronics; power MOSFET; silicon compounds; wide band gap semiconductors; SiC; automobile applications; current 300 A; high-temperature bonding method; high-temperature materials; high-temperature operation IPM; inductive load circuits; large-current power devices; single-chip trench MOSFET; temperature 250 degC; Annealing; Automobiles; Bonding; Electrodes; MOSFETs; Oxidation; Power electronics; Semiconductor materials; Silicon carbide; Temperature; SiC DMOSFET; automobile application; trench MOSFET;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5542036
