Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

Author

Boyle, Jonathan ; Hanket, Gregory ; Shafarman, William

Author_Institution

Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA

fYear

2009

fDate

7-12 June 2009

Abstract

(Ag,Cu)(In,Ga)Se₂ thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (ahv)² vs. hv, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Keywords

copper compounds; energy gap; gallium compounds; indium compounds; silver compounds; solar absorber-convertors; solar cells; ternary semiconductors; thin films; vacuum deposition; (AgCu)(InGa)Se₂; Ga-(In+Ga) groups; absorber layers; electron volt energy 1 eV to 1.76 eV; elemental co-evaporation; optical bandgaps; optical bowing parameter; quantum efficiency analysis; quantum efficiency device; quantum efficiency device measurements; reflection measurement; relative shift analysis; thin films; transmission measurement; Glass; Optical devices; Optical films; Optical reflection; Optical saturation; Photonic band gap; Photovoltaic cells; Sputtering; Temperature; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411272

Filename

5411272