Title :
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
Author :
Samanta, S.K. ; Singh, P.K. ; Yoo, Won Jong ; Samudra, Ganesh ; Yeo, Yee-Chia ; Bera, L.K. ; Balasubramanian, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., National Univ. of Singapore
Abstract :
This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial
Keywords :
memory architecture; nanostructured materials; random-access storage; semiconductor devices; tungsten; 100 nm; HfAlO; W; double layer device; good retention; memory window; short channel nonvolatile memory devices; small scale devices; tungsten nanocrystals; two-bit operation; Dielectric substrates; Fabrication; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Sputtering; Thickness control; Tungsten; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609297
