DocumentCode :
3441369
Title :
Nanocrystal flash memory fabricated with protein-mediated assembly
Author :
Tang, Shan ; Mao, Chuanbin ; Liu, Yueran ; Kelly, David Q. ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
174
Lastpage :
177
Abstract :
For the first time, we demonstrate that a chaperonin protein lattice can be used as a template to assemble nanocrystal arrays for flash memory fabrication. This provides a brand new approach that can incorporate different types of nanocrystals from a colloidal suspension for flash memory fabrication. Lead selenide (PbSe) and cobalt (Co) nanocrystal assemblies achieved through this method have a high density of 9.5 times1011/cm2 and 1.6 times 1012 /cm2, respectively, as well as very good distribution uniformity. Devices exhibit promising flash memory functions, with a flat band shift of 0.5V under 8V operation, endurance >105 cycles and retention time >104 seconds
Keywords :
cobalt; flash memories; lead compounds; nanostructured materials; proteins; 0.5 V; 8 V; Co; PbSe; chaperonin protein lattice; colloidal suspension; flat band shift; nanocrystal flash memory; protein mediated assembly; Assembly; Chemical vapor deposition; EPROM; Fabrication; Flash memory; Lattices; Nanocrystals; Nonvolatile memory; Proteins; Size control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609298
Filename :
1609298
Link To Document :
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