Title :
Hot phonons and Auger heating in semiconductor optical amplifiers
Author :
Deveaud, B. ; Fehr, J.N. ; Dupertuis, M.A. ; Hessler, Th. ; Kappei, L. ; Marti, D. ; Dagens, B. ; Emery, J.Y.
Author_Institution :
Phys. Dept., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
Summary form only given. We have designed a setup to observe the spatially resolved spontaneous emission of semiconductor optical amplifiers, with or without light injection. Clear longitudinal hole burning due to ASE has been reported previously, which depends on the power of the injected optical signal. The same experiment directly shows that the carrier temperature may be higher than 400 K. We have studied the carrier temperature as a function of the current density flowing in the device, as well as depending on the light beam injected and amplified. It follows from our experimental observations that the main heating mechanism is Auger in the valence band (CHHH or CHHS), which brings large excess temperature for densities above 2.10/sup 18/ cm/sup -2/.
Keywords :
Auger effect; electron-hole recombination; electron-phonon interactions; optical hole burning; semiconductor optical amplifiers; semiconductor plasma; superradiance; Auger heating; Auger recombination; Fermi level; carrier temperature; current density; electron-hole plasma; equilibrium distribution; hot phonons; large excess temperature; light injection; longitudinal hole burning; rate equation model; recombination heating; semiconductor optical amplifiers; spatially resolved spontaneous emission; valence band; Current density; Heating; Optical design; Phonons; Semiconductor optical amplifiers; Signal resolution; Spatial resolution; Spontaneous emission; Stimulated emission; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947396
