Title :
Stress-induced voiding under vias connected to "narrow" copper lines
Author :
Kouno, T. ; Suzuki, T. ; Otsuka, S. ; Hosoda, T. ; Nakamura, T. ; Mizushima, Y. ; Shiozu, M. ; Matsuyama, H. ; Shono, K. ; Watatani, H. ; Ohkura, Y. ; Sato, M. ; Fukuyama, S. ; Miyajima, M.
Author_Institution :
Fujitsu Ltd., Tokyo
Abstract :
Stress-induced voiding under vias connected to "narrow" Copper (Cu) lines (SIV-N) was observed, for the first time, using newly prepared test structures which consisted of isolated vias between narrow (0.14 mum-wide) and very long (200 mum-long) 2-level Cu wires. Mechanism of SIV-N is different from that of well-known stress-induced voiding under vias connected to "wide" Cu lines (SIV-W), because SIV-N cannot occur during actual time according to the model that explains SIV-W. In addition, we found the effect of plasma pretreatment of cap dielectrics and cap dielectrics themselves on SIV-N and the other reliability issues, and succeeded in obtaining the condition which satisfied SIV-N, SIV-W and EM
Keywords :
copper; dielectric materials; wires (electric); 0.14 micron; 200 micron; Cu; SIV-N; cap dielectrics; copper lines; plasma pretreatment; stress induced voiding; test structures; vias connected; Atherosclerosis; Copper; Dielectrics; Electromigration; Hydrogen; Laboratories; Performance evaluation; Plasma temperature; Testing; Wires;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609302
