Title :
Process damages in HfO/sub 2//TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals
Author :
Garros, X. ; Reimbold, G. ; Louveau, O. ; Holliger, P. ; Hobbs, C. ; Leroux, C. ; Nguyen, L. Pham ; Martin, F. ; Boulanger, F.
Author_Institution :
CEA, Grenoble
Abstract :
Plasma damages have been studied in HfO2 stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides
Keywords :
annealing; hafnium compounds; metallisation; titanium compounds; 475 C; annealed oxides; enhanced degradation; hydrogen plasma; low temperature; metal gate; metallization; passivate interface; plasma damages; Channel bank filters; Conducting materials; Curing; Degradation; Hafnium oxide; Hydrogen; Plasma temperature; Simulated annealing; Stress; Tin;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609303
