• DocumentCode
    3441491
  • Title

    Process damages in HfO/sub 2//TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals

  • Author

    Garros, X. ; Reimbold, G. ; Louveau, O. ; Holliger, P. ; Hobbs, C. ; Leroux, C. ; Nguyen, L. Pham ; Martin, F. ; Boulanger, F.

  • Author_Institution
    CEA, Grenoble
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Lastpage
    194
  • Abstract
    Plasma damages have been studied in HfO2 stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides
  • Keywords
    annealing; hafnium compounds; metallisation; titanium compounds; 475 C; annealed oxides; enhanced degradation; hydrogen plasma; low temperature; metal gate; metallization; passivate interface; plasma damages; Channel bank filters; Conducting materials; Curing; Degradation; Hafnium oxide; Hydrogen; Plasma temperature; Simulated annealing; Stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609303
  • Filename
    1609303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3441491