Title :
Comparison of transparent back contacts for CdTe top cells in tandem thin-film photovoltaic devices
Author :
Duenow, Joel N. ; Barnes, Teresa M. ; Dhere, Ramesh G. ; Bergeson, Jeremy D. ; Larson, Brian A. ; Blackburn, Jeffrey L. ; Duda, Anna ; Teeter, Glenn ; Gessert, Timothy A.
Author_Institution :
Nat. Renewable Energy Lab. (NREL), Golden, CO, USA
Abstract :
Two-junction tandem thin-film photovoltaic cells are composed of a wide-bandgap top cell overlying a narrower-bandgap bottom cell. CdTe, with a bandgap of 1.5 eV, can function effectively as a top cell when paired with a bottom cell of appropriate bandgap. Effective two-junction cells require a back contact to the top cell that is transparent to the sub-bandgap radiation absorbed by the bottom cell. In this study, we fabricate CdTe top cells with transparent back contacts. We form the ohmic contact to CdTe by using semi-transparent Cu-doped ZnTe as the back-contact interface layer. We compare Al-doped ZnO, indium tin oxide, and single-wall carbon nanotube networks for use as the final transparent conductor. These transparent cells demonstrate device efficiencies comparable to those of control devices using the standard Ti metallization.
Keywords :
II-VI semiconductors; aluminium; cadmium compounds; carbon nanotubes; copper; indium compounds; ohmic contacts; photovoltaic cells; semiconductor thin films; tin compounds; wide band gap semiconductors; zinc compounds; CdTe-C; CdTe-ITO; CdTe-ZnO:Al; CdTe-ZnTe:Cu; device efficiency; metallization; narrower bandgap bottom cell; ohmic contact; single-wall carbon nanotube; tandem thin film photovoltaic devices; top cells; transparent back contacts; transparent conductor; two-junction cells; wide bandgap top cell; Indium tin oxide; Ohmic contacts; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Thin film devices; Transistors; Zinc compounds; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411282