• DocumentCode
    3441566
  • Title

    High-voltage LDMOS compact model for RF applications

  • Author

    Willemsen, M.B. ; van Langevelde, R.

  • Author_Institution
    Philips Res. Labs., Eindhoven
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    We present a compact model for RF-LDMOS transistors. The model is based on a continuous description of the lateral electric field, and contains the physical phenomena of partial lateral depletion and velocity saturation in the drift region. The model has been validated with device simulations and measurements
  • Keywords
    MOSFET; semiconductor device models; RF-LDMOS transistors; compact model; drift region; lateral electric field; partial lateral depletion; velocity saturation; Capacitance measurement; Circuit simulation; Electronic mail; Frequency measurement; Laboratories; Poisson equations; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609308
  • Filename
    1609308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3441566