DocumentCode :
3441579
Title :
Novel bridgeless PFC converters with low inrush current stress and high efficiency
Author :
Mino, K. ; Matsumoto, H. ; Fujita, S. ; Nemoto, Y. ; Kawasaki, D. ; Yamada, R. ; Tawada, N.
Author_Institution :
Fuji Electr. Holdings Co., Ltd., Hino, Japan
fYear :
2010
fDate :
21-24 June 2010
Firstpage :
1733
Lastpage :
1739
Abstract :
This paper presents novel bridgeless power factor correction circuits that achieve both high reliability and high efficiency. The proposed circuits can protect Silicon Carbide Schottky barrier diodes and MOSFETs against flowing high inrush current without impairing efficiency. This paper introduces the principle of operation including the control scheme and verified performance based on simulation and experimental results.
Keywords :
Schottky diodes; power MOSFET; power convertors; power factor correction; power semiconductor diodes; silicon compounds; wide band gap semiconductors; MOSFET; SiC; bridgeless PFC converters; bridgeless power factor correction circuits; low inrush current stress; silicon carbide Schottky barrier diode protection; Circuits; Inductors; MOSFETs; Power electronics; Power system reliability; Schottky diodes; Semiconductor diodes; Stress; Surge protection; Voltage; Efficiency; Inrush current; PFC; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
Type :
conf
DOI :
10.1109/IPEC.2010.5542051
Filename :
5542051
Link To Document :
بازگشت