Title :
Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects
Author :
Ghione, G. ; Bonani, F. ; Donati, S. ; Bertazzi, F. ; Conte, G.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino
Abstract :
A review is provided on state-of-the-art techniques for the physics-based numerical simulation of noise in semiconductor devices, with particular attention to large-signal forced operation and to the related noise frequency conversion. Open problems associated to the modeling of 1/f-like noise in large-signal operation through a superposition of GR noise sources are discussed with the help of simulation examples. Finally, a 2D physics-based noise analysis of a FET active mixer is presented
Keywords :
field effect transistors; mixers (circuits); semiconductor device models; semiconductor device noise; 1/f-like noise; FET active mixer; large-signal operation; noise analysis; noise frequency conversion; noise modeling; noise sources; physics-based numerical simulation; semiconductor devices; state-of-the-art techniques; Acoustic noise; Analytical models; Circuit noise; Circuit simulation; Fluctuations; Frequency conversion; Low-frequency noise; Noise generators; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609309
