High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

Author

Sung, Chun-Yung ; Yin, Haizhou ; Ng, Hung Y. ; Saenger, Katherine L. ; Chan, Victor ; Crowder, Scott W. ; Li, Jinghong ; Ott, John A. ; Bendernagel, Robert ; Kempisty, Jeremy J. ; Ku, Victor ; Lee, H.K. ; Luo, Zhijiong ; Madan, Anita ; Mo, Renee T. ; Nguy

Author_Institution

Res. Div., T.J. Watson Res. Center, Yorktown Heights, NY

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

225

Lastpage

228

Abstract

High performance 65-nm technology (L_poly=45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using direct silicon bonded (DSB) wafers and a solid phase epitaxy (SPE) process. The pFET performance is improved by 35% due to hole mobility enhancement on (110) surfaces as compared to (100) surfaces. nFETs on SPE-converted (100) surfaces exhibit the same performance as those on (100) controls. Ring oscillators fabricated using DSB with SPE show improvements of more than 20% compared with control CMOS on (100) surfaces

Keywords

CMOS integrated circuits; MOSFET; bonding processes; crystal orientation; hole mobility; silicon; solid phase epitaxial growth; 1.2 nm; 45 nm; 65 nm; CMOS bulk technology; SPE-converted surfaces; Si; direct silicon bond; direct silicon bonded wafers; hole mobility enhancement; mixed crystal orientation substrates; ring oscillators; solid phase epitaxy process; CMOS process; CMOS technology; Epitaxial growth; Protection; Research and development; Ring oscillators; Silicon; Solids; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609313

Filename

1609313