Thermal and source bumps utilizing carbon nanotubes for flip-chip high power amplifiers

Author

Iwai, T. ; Shioya, H. ; Kondo, D. ; Hirose, S. ; Kawabata, A. ; Sato, S. ; Nihei, M. ; Kikkawa, T. ; Joshin, K. ; Awano, Y. ; Yokoyama, N.

Author_Institution

Nanotechnology Res. Center, Fujitsu Labs. Ltd., Atsugi

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

257

Lastpage

260

Abstract

Carbon nanotubes (CNTs) have been successfully developed as thermal and source bumps for flip-chip high power amplifiers (HPAs). The newly developed 15 mum long CNT bumps exhibit thermal conductivity of 1400 W/m-K. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 2.4 mm utilizing CNT bumps, operating voltage of 40 V, exhibits an output power of 39 dBm at, a frequency of 2.1 GHz without any degradation due to heat-up. To our knowledge, this is the first report about, a practical application of CNTs using their high thermal conductivity

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; carbon nanotubes; gallium compounds; power amplifiers; thermal conductivity; wide band gap semiconductors; 2.1 GHz; 2.4 mm; 40 V; AlGaN-GaN; HEMT; carbon nanotubes; flip chip high power amplifiers; source bumps; thermal bumps; thermal conductivity; Aluminum gallium nitride; Carbon nanotubes; Frequency; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609322

Filename

1609322