Title :
Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)
Author :
Jang, J.E. ; Cha, S.N. ; Choi, Y. ; Butler, T.P. ; Kang, D.J. ; Hasko, D.G. ; Jung, J.E. ; Kim, J.M. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
A nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines ´ON´ and ´OFF´ states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well
Keywords :
DRAM chips; ULSI; nanoelectronics; nanotube devices; electromechanical switch; mechanical movement; nanoelectromechanical DRAM; ultra large scale integration; vertical capacitor structure; vertical nanotube structure; Batteries; Capacitors; DRAM chips; Electrodes; Fabrication; Nanoscale devices; Random access memory; Silicon; Switches; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609323
