Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

Author

Jang, J.E. ; Cha, S.N. ; Choi, Y. ; Butler, T.P. ; Kang, D.J. ; Hasko, D.G. ; Jung, J.E. ; Kim, J.M. ; Amaratunga, G.A.J.

Author_Institution

Dept. of Eng., Cambridge Univ.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

261

Lastpage

264

Abstract

A nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines ´ON´ and ´OFF´ states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well

Keywords

DRAM chips; ULSI; nanoelectronics; nanotube devices; electromechanical switch; mechanical movement; nanoelectromechanical DRAM; ultra large scale integration; vertical capacitor structure; vertical nanotube structure; Batteries; Capacitors; DRAM chips; Electrodes; Fabrication; Nanoscale devices; Random access memory; Silicon; Switches; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609323

Filename

1609323

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3441819