• DocumentCode
    3441845
  • Title

    A new logic family based on hybrid MOSFET-polysilicon nanowires

  • Author

    Ecoffey, S. ; Mazza, M. ; Pott, V. ; Bouvet, D. ; Schmid, A. ; Leblebici, Y. ; Declercq, M.J. ; Ionescu, A.M.

  • Author_Institution
    Inst. of Microelectron. & Microsyst., Swiss Fed. Inst. of Technol., Lausanne
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    A new logic family based on ultra-thin film (10nm) nanograins (5 to 20nm) polysilicon wires (polySiNW) is proposed, validated and studied. This logic family can be operated from 4K up to 400K and hybridized with conventional CMOS. Ultra low power dissipation in the order of hundreds of pWs has been observed, which is outperforming CMOS technology, in terms of power consumption, by orders of magnitude
  • Keywords
    MOSFET; logic circuits; nanowires; silicon; 4 to 400 K; 5 to 20 nm; CMOS technology; hybrid MOSFET; logic family; polysilicon nanowires; ultra thin film; CMOS logic circuits; CMOS technology; Hysteresis; Intrusion detection; MOSFET circuits; Microelectronics; Nanowires; Power dissipation; Tunneling; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609325
  • Filename
    1609325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3441845