Growth of AgInS2 crystals grown by hot-presss method

Author

Tokuda, Takahiro ; Nagaoka, Akira ; Yoshino, Kenji

Author_Institution

Dept. of Electr. & Electr. Eng., Univ. of Miyazaki, Miyazaki, Japan

fYear

2009

fDate

7-12 June 2009

Abstract

AgInS₂ crystals with various Ag/In ratio were grown by a Hot-Press method at 700Â°C under 25 MPa for 1 hour. The size of all samples was 20 mm in diameter. AgIn₅S₈ phases were also observed in In-rich samples from X-ray diffraction. Furthermore, lattice constants of In- and Ag-rich samples were larger than stoichiometric sample because of interstitial atoms. All samples indicated n-type conductivity from Hall measurement. It was deduced that lattice defects of interstitial Ag atoms and sulfur vacancy were existed in Ag- and In-rich samples, respectively.

Keywords

Hall effect; crystal growth; electrical conductivity; hot pressing; indium compounds; interstitials; semiconductor growth; silver compounds; ternary semiconductors; vacancies (crystal); AgInS₂; Hall measurement; hot-press method; interstitial; lattice defects; n-type conductivity; pressure 25 MPa; size 20 mm; sulfur vacancy; temperature 700 degC; time 1 hour; Atomic measurements; Conducting materials; Conductivity measurement; Crystals; Grain size; Lattices; Photovoltaic cells; Temperature; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411302

Filename

5411302