Title :
Growth of AgInS2 crystals grown by hot-presss method
Author :
Tokuda, Takahiro ; Nagaoka, Akira ; Yoshino, Kenji
Author_Institution :
Dept. of Electr. & Electr. Eng., Univ. of Miyazaki, Miyazaki, Japan
Abstract :
AgInS2 crystals with various Ag/In ratio were grown by a Hot-Press method at 700°C under 25 MPa for 1 hour. The size of all samples was 20 mm in diameter. AgIn5S8 phases were also observed in In-rich samples from X-ray diffraction. Furthermore, lattice constants of In- and Ag-rich samples were larger than stoichiometric sample because of interstitial atoms. All samples indicated n-type conductivity from Hall measurement. It was deduced that lattice defects of interstitial Ag atoms and sulfur vacancy were existed in Ag- and In-rich samples, respectively.
Keywords :
Hall effect; crystal growth; electrical conductivity; hot pressing; indium compounds; interstitials; semiconductor growth; silver compounds; ternary semiconductors; vacancies (crystal); AgInS2; Hall measurement; hot-press method; interstitial; lattice defects; n-type conductivity; pressure 25 MPa; size 20 mm; sulfur vacancy; temperature 700 degC; time 1 hour; Atomic measurements; Conducting materials; Conductivity measurement; Crystals; Grain size; Lattices; Photovoltaic cells; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411302
