Title :
Fabrication and opto-electric properties of silicon based heterojunction SIS cells
Author :
He Bo ; Zhong Quan Ma ; Xu Jing ; Fei, Yun ; Tang Ying Hui ; Zhao Lei ; Zhang Nan Sheng ; Li Feng ; Cheng, Shen ; Shen Ling ; Meng Xia Jie ; Zhou Cheng Yue ; Yu Zheng Shan ; Yin Yan Ting
Author_Institution :
Dept. of Phys., Shanghai Univ., Shanghai, China
Abstract :
ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.
Keywords :
II-VI semiconductors; aluminium; indium compounds; photoelectricity; rectification; semiconductor growth; semiconductor thin films; semiconductor-insulator-semiconductor devices; semiconductor-insulator-semiconductor structures; solar cells; sputter deposition; thin film devices; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ITO-ZnO:Al-SiO2-Si; RF sputtering; SIS solar cells; UV-VIS spectrophotometer; double films; electrical junction properties; electrical properties; four point probe; optics properties; p-Si texturized substrate; photoelectric effect; rectifying behavior; semiconductor-insulator-semiconductor heterojunction; structural properties; Electric variables measurement; Heterojunctions; Indium tin oxide; Nonlinear optics; Optical device fabrication; Optical films; Probes; Radio frequency; Silicon; Sputtering; Al-doped ZnO (AZO); ITO; SIS heterojunction; Sputtering; current-voltage (I–V) characteristics;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411303
