Title :
Outdoor spectral analysis of amrophous-silicon and heterojunction with intrinsic thin layer modules
Author :
Simon, Michael ; Meyer, Edson L.
Author_Institution :
Fort Hare Inst. of Technol., Univ. of Fort Hare, Alice, South Africa
Abstract :
The birth of amorphous silicon (a-Si:H) cells came as a promising solution for addressing the world energy needs as compared to its crystalline counterpart. This cutting edge advantage has been attributed largely to the simple fabrication process usually comprising of a glow discharge decomposition of silane (SiH4) using a plasma chemical vapour deposition (PCVD), less material (thin film) and simple cell structure [1]. The major draw back of a-Si devices as an ultimate contributor in addressing the world energy needs is its unstable efficiency and initial degradation. The development of the hetero-junction.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; spectral analysis; thin film devices; Si:H; Staebler-Wronski effect; glow discharge decomposition; heterojunction solar cells; intrinsic thin layer modules; outdoor spectral analysis; plasma chemical vapour deposition; thin film; unstable efficiency; Amorphous silicon; Chemical processes; Crystallization; Fabrication; Glow discharges; Heterojunctions; Plasma chemistry; Plasma devices; Plasma materials processing; Spectral analysis;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411308
