Outdoor spectral analysis of amrophous-silicon and heterojunction with intrinsic thin layer modules

The birth of amorphous silicon (a-Si:H) cells came as a promising solution for addressing the world energy needs as compared to its crystalline counterpart. This cutting edge advantage has been attributed largely to the simple fabrication process usually comprising of a glow discharge decomposition of silane (SiH4) using a plasma chemical vapour deposition (PCVD), less material (thin film) and simple cell structure [1]. The major draw back of a-Si devices as an ultimate contributor in addressing the world energy needs is its unstable efficiency and initial degradation. The development of the hetero-junction.