Title :
High surge forward current ruggedness of 5kV class 4H-SiC pn diode
Author :
Ogata, S. ; Asano, K. ; Sugawara, Y. ; Tanaka, A. ; Miyanagi, Y. ; Nakayama, K. ; Izumi, T. ; Hayashi, T. ; Nishimura, M.
Author_Institution :
Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device´s destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
Keywords :
power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; SiC; device destruction temperature; diode resistance; pn diode; positive temperature coefficient; voltage 5 kV; Fuses; Inverters; Power electronics; Resistance heating; Semiconductor diodes; Silicon carbide; Surge protection; Temperature; Testing; Voltage; SiC pn diode; intrinsic carrier density; negative temperature coefficient resistor; surge current ruggedness;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5542079
