DocumentCode
3442088
Title
High speed laser structuring of crystalline silicon solar cells
Author
Eidelloth, S. ; Neubert, T. ; Brendemühl, T. ; Hermann, S. ; Giesel, P. ; Brendel, R.
Author_Institution
Inst. fur Solarenergieforschung Hameln (ISFH), Emmerthal, Germany
fYear
2009
fDate
7-12 June 2009
Abstract
Fast laser processing is commonly done using a Gaussian laser beam in combination with a scanner. Single laser pulses only affect a limited area beneath the Gaussian intensity bell and result in circular impact regions. Adjacent impact regions have to overlap when continuous processing larger areas. Thus, the processing speed is greatly enhanced by replacing the Gaussian profile with a flat-top intensity profile and by replacing the radial symmetric cross section with a rectangular cross section. However, processing with a rectangular flat-top laser beam through a scanner has, to the best of our knowledge, not yet been demonstrated. We report on the successful design and experimental tests of a new laser system that images a rectangular flat-top profile through a scanner. Our so-called Simultaneous Scanning and Laser Beam Imaging - system (SIMSALABIM) machines a finger pattern that covers 50% of a (125 Ã 125) mm2 crystalline Si solar cell in 14 s. Two parallel systems with increased output power should process the same area in just 2.5 s.
Keywords
Gaussian distribution; elemental semiconductors; laser materials processing; silicon; solar cells; Gaussian intensity bell; Gaussian laser beam; Si; crystalline silicon solar cells; flat-top intensity profile; high speed laser structuring; processing speed; radial symmetric cross section; rectangular cross section; rectangular flat-top laser beam; simultaneous scanning laser beam imaging system; time 14 s; time 2.5 s; Crystallization; Geometrical optics; Laser ablation; Laser beams; Laser modes; Lenses; Mirrors; Optical propagation; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411310
Filename
5411310
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