DocumentCode
3442117
Title
Advantages of flip chip technology in millimeter-wave packaging
Author
Krems, T. ; Haydll, W.H. ; Massler, H. ; Rudiger, J.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
987
Abstract
Power leakage into surface waves in monolithically integrated millimeter-wave circuits is to a great extent determined by the applied packaging technology. In this presentation it is shown that properly designed flip chip packages will not suffer from surface wave leakage. Coplanar waveguides on GaAs substrates are used to demonstrate the decisive differences in the leakage behavior of flip chip mounted MMICs and more conventional MMW packages, featuring surface mounted MMICs connected by wire bonds. All results are based on full wave spectral domain analysis and measurement data in the frequency range from 10 to 120 GHz.
Keywords
MIMIC; MMIC; S-parameters; coplanar waveguides; flip-chip devices; integrated circuit measurement; integrated circuit packaging; microwave measurement; millimetre wave measurement; spectral-domain analysis; 10 to 120 GHz; GaAs; GaAs substrates; S-parameters; coplanar waveguides; flip chip mounted MMICs; flip chip technology; full wave spectral domain analysis; millimeter-wave packaging; monolithically integrated millimeter-wave circuits; power leakage; propagation constants; surface wave leakage; Coplanar waveguides; Flip chip; Gallium arsenide; Integrated circuit technology; MMICs; Millimeter wave circuits; Millimeter wave integrated circuits; Millimeter wave technology; Packaging; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602967
Filename
602967
Link To Document