A study on power device loss of DC-DC buck converter with SiC schottky barrier diode

Author

Sekikawa, Munehisa ; Funaki, Tsuyoshi ; Hikihara, Takashi

Author_Institution

Grad. Sch. of Eng., Kyoto Univ., Kyoto, Japan

fYear

2010

fDate

21-24 June 2010

Firstpage

1941

Lastpage

1945

Abstract

Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty ratio of the gate drive signal.

Keywords

DC-DC power convertors; Schottky diodes; power semiconductor devices; silicon compounds; wide band gap semiconductors; DC-DC buck converter; SiC; SiC Schottky barrier diode; duty ratio; gate drive signal; loss reduction; next generation power semiconductor devices; power device loss; silicon free wheeling diode; switching frequency; Buck converters; MOSFET circuits; Power MOSFET; Power electronics; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Switching frequency; Voltage; DC-DC buck converter; SiC schottky barrier diode; power device loss; reverse recovery current;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC), 2010 International

Conference_Location

Sapporo

Print_ISBN

978-1-4244-5394-8

Type

conf

DOI

10.1109/IPEC.2010.5542086

Filename

5542086