• DocumentCode
    3442157
  • Title

    Earth abundant materials for high efficiency heterojunction thin film solar cells

  • Author

    Lee, Yun Seog ; Bertoni, Mariana ; Chan, Maria K. ; Ceder, Gerbrand ; Buonassisi, Tonio

  • Author_Institution
    Dept. of Mech. Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure calculations, and literature reviews. We identified cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar cells. Cu2O thin films are deposited by reactive DC magnetron sputtering and characterized. In order to tailor electrical properties, we modify grain structure, and add defects that enhance electron transport, maintaining desired optical gap.
  • Keywords
    copper compounds; crystal microstructure; electrical resistivity; electronic structure; energy gap; optical constants; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; Cu2O; absorber layer; bandgap; cuprous oxide; defects; earth abundant materials; electrical properties; electron transport; grain structure; high efficiency heterojunction thin film solar cells; large-scale electronic structure calculations; optical gap; reactive DC magnetron sputtering; resistivity; Earth; Electron optics; Heterojunctions; Large-scale systems; Magnetosphere; Optical films; Photovoltaic cells; Prototypes; Sputtering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411314
  • Filename
    5411314