A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

Author

Shin, Yoocheol ; Choi, Jungdal ; Kang, Changseok ; Lee, Changhyun ; Park, Ki-Tae ; Lee, Jang-Sik ; Sel, Jongsun ; Kim, Viena ; Choi, Byeongin ; Sim, Jaesung ; Kim, Dongchan ; Cho, Hag-Ju ; Kim, Kinam

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

327

Lastpage

330

Abstract

A NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and peripheral circuits. In this study, optimized TANOS (TaN-Al₂O ₃-nitride-oxide- silicon) cells integrated using 63nm NAND flash technology showed high performance compatible to floating-gate (FG) cell. The newly-developed TANOS-NAND flash technology proved to be a promising candidate to replace FG memory beyond 50nm technology

Keywords

NAND circuits; aluminium compounds; flash memories; nanoelectronics; silicon compounds; tantalum compounds; 63 nm; NAND flash technology; NAND-type MONOS memory; TANOS cells; TaN-Al₂O₃-SiN-SiO₂; floating-gate cell; multigigabit flash EEPROM; optimized cell structures; EPROM; Flash memory; High K dielectric materials; Integrated circuit technology; Interference; MONOS devices; Nonvolatile memory; Research and development; SONOS devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609341

Filename

1609341