DocumentCode :
3442169
Title :
A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs
Author :
Shin, Yoocheol ; Choi, Jungdal ; Kang, Changseok ; Lee, Changhyun ; Park, Ki-Tae ; Lee, Jang-Sik ; Sel, Jongsun ; Kim, Viena ; Choi, Byeongin ; Sim, Jaesung ; Kim, Dongchan ; Cho, Hag-Ju ; Kim, Kinam
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do
fYear :
2005
fDate :
5-5 Dec. 2005
Firstpage :
327
Lastpage :
330
Abstract :
A NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and peripheral circuits. In this study, optimized TANOS (TaN-Al2O 3-nitride-oxide- silicon) cells integrated using 63nm NAND flash technology showed high performance compatible to floating-gate (FG) cell. The newly-developed TANOS-NAND flash technology proved to be a promising candidate to replace FG memory beyond 50nm technology
Keywords :
NAND circuits; aluminium compounds; flash memories; nanoelectronics; silicon compounds; tantalum compounds; 63 nm; NAND flash technology; NAND-type MONOS memory; TANOS cells; TaN-Al2O3-SiN-SiO2; floating-gate cell; multigigabit flash EEPROM; optimized cell structures; EPROM; Flash memory; High K dielectric materials; Integrated circuit technology; Interference; MONOS devices; Nonvolatile memory; Research and development; SONOS devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609341
Filename :
1609341
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3442169
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