Title :
High speed ablation etching and microstructure fabrication of hexagonal GaN using femtosecond laser
Author :
Ozono, K. ; Obara, M. ; Usui, A. ; Sunakawa, H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
Summary form only given. We report on the demonstration of nonthermal high-speed ablation etching and microstructure fabrication of GaN using diffractive optics by high-intensity femtosecond laser at 800 nm and at 1 kpps. The GaN film used here is about 100 /spl mu/m thick film grown on the sapphire substrate. The laser ablation of GaN film is done in air at room temperature using a 150 fs Ti:sapphire laser.
Keywords :
III-V semiconductors; gallium compounds; optical fabrication; optical films; pulsed laser deposition; semiconductor thin films; 100 micron; 150 fs; 800 nm; GaN; GaN film; Ti:sapphire laser; diffractive optics; femtosecond laser; hexagonal GaN; high speed ablation etching; high-intensity femtosecond laser; laser ablation; microstructure fabrication; nonthermal high-speed ablation etching; room temperature; sapphire substrate; Etching; Gallium nitride; High speed optical techniques; Laser ablation; Microstructure; Optical device fabrication; Optical diffraction; Optical films; Thick films; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947432
