Title :
A study on the high frequency operation of DC-DC converter with SiC DMOSFET
Author :
Sasagawa, M. ; Nakamura, T. ; Inoue, H. ; Funaki, T.
Author_Institution :
Rohm Co. Ltd., Kyoto, Japan
Abstract :
SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter for high switching frequency operation; such as 200 kHz. The electrical characteristics of Si IGBT module are compared with the SiC device. The significant differences are observed especially for high switching frequency operation, and SiC device shows suitable characteristics for high frequency operation than conventional Si power module.
Keywords :
DC-DC power convertors; MOSFET; insulated gate bipolar transistors; silicon compounds; switching convertors; DC-DC converter; DMOSFET; SiC; insulated gate bipolar transistors; power conversion circuit; power efficiency; power loss; switching time; Circuits; DC-DC power converters; Electric variables; Frequency conversion; Insulated gate bipolar transistors; Power conversion; Silicon carbide; Switching converters; Switching frequency; Voltage; DC-DC converter; SiC DMOSFET; high frequency; switching;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5542089
