DocumentCode
3442208
Title
Sims analytical technique for PV applications
Author
Peres, P. ; Merkulov, A. ; Desse, F. ; Schuhmacher, M.
Author_Institution
CAMECA, Gennevilliers, France
fYear
2009
fDate
7-12 June 2009
Abstract
This paper presents analytical performance provided by SIMS tools for the development and manufacturing of new solar cells. Results for two main applications are presented: trace element analysis in PV Si feedstock with detection limits from the ppm down to the ppb range (depending on the species to be analyzed) for light elements (C, O, N), main Si dopants (B, P, As) and metals ; in-depth distribution of main components and trace elements in CIGS thin films.
Keywords
arsenic; boron; elemental semiconductors; phosphorus; silicon; solar cells; PV Si feedstock; PV applications; SIMS analytical technique; Si dopants; Si:As; Si:B; Si:P; in-depth distribution; light elements; solar cells; thin films; Artificial intelligence; Impurities; Interference elimination; Iron; Manufacturing; Mass spectroscopy; Monitoring; Photovoltaic cells; Pollution measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411316
Filename
5411316
Link To Document