DocumentCode :
3442222
Title :
Coupled localized and distributed elements analysis applying an electromagnetic software in the frequency domain
Author :
Baillargeat, D. ; Larique, E. ; Verdeyme, S. ; Aubourg, M. ; Sommet, R. ; Guillon, P.
Author_Institution :
Fac. des Sci., I.R.C.O.M.-UMR CNRS, Limoges, France
Volume :
2
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
1021
Abstract :
A coupled localized and distributed elements analysis applying the F.E.M. in the frequency domain is described. First, two studies concerning a two port network and a gunn diode amplifier, are performed to prove with success the efficiency of our method. Then the main objective of this paper is to present an electromagnetic analysis of the passive area of a transistor (FET) taking into account all its physical and geometrical characteristics. Theoretical and experimental results are compared and they show encouraging agreement.
Keywords :
Gunn devices; distributed parameter networks; finite element analysis; frequency-domain analysis; lumped parameter networks; microwave amplifiers; microwave field effect transistors; network analysis; two-port networks; FEM; Gunn diode amplifier; coupled analysis; distributed element; electromagnetic software; field effect transistor; frequency domain; localized element; two port network; Circuits; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic devices; Electromagnetic fields; Electromagnetic modeling; Electromagnetic scattering; Frequency domain analysis; Microwave FETs; Numerical analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.602975
Filename :
602975
Link To Document :
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