Title :
Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application
Author :
Koo, June-Mo ; Seo, Bum-Seok ; Kim, Sukpil ; Shin, Sangmin ; Lee, Jung-Hyun ; Baik, Hionsuck ; Lee, Jang-Ho ; Lee, Jun Ho ; Bae, Byoung-Jae ; Lim, Ji-Eun ; Yoo, Dong-Chul ; Park, Soon-Oh ; Kim, Hee-Suk ; Han, Hee ; Baik, Sunggi ; Choi, Jae-Young ; Park, Y
Author_Institution :
Nano Devices Lab., Samsung Electron. Co. Ltd., Kyungki-do
Abstract :
We fabricated trench PbZrxTi1-xO3 (PZT) capacitors that can be used in 256Mbit 1T-1C FRAM devices. The capacitor has 0.25mum diameter and 0.4mum depth. Three layers, Ir(20nm)/PZT(60nm)/Ir(20nm), were deposited in SiO2 trench holes by ALD and MOCVD. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative portion had strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under 2.1V external bias and 19 to 24 muC/cm2 remnant polarization
Keywords :
MOCVD; atomic layer deposition; ferroelectric capacitors; ferroelectric storage; iridium; lead compounds; random-access storage; silicon compounds; titanium compounds; zirconium compounds; 0.25 micron; 0.4 micron; 2.1 V; 20 nm; 256 Mbit; 3D trench PZT capacitors; 60 nm; FRAM device application; Ir-PbZrTiO3-Ir-SiO2; atomic layer deposition; columnar grains; granular grains; metalorganic chemical vapor deposition; trench holes; Capacitors; Fabrication; Ferroelectric films; Ferroelectric materials; Laboratories; MOCVD; Materials science and technology; Nonvolatile memory; Polarization; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609345
