Title :
Fabrication of a monolithic 2 /spl times/ 2 crosspoint switches in an InGaAs/InAlGaAs multiple quantum well structure using quantum well intermixing
Author :
Qiu, B.C. ; Liu, X.F. ; Ke, M.L. ; Lee, H.K. ; Bryce, A.C. ; Aitchison, J.S. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Summary form only given. We report on the fabrication and assessment of 2 /spl times/ 2 crosspoint switches based on EA modulators using the quantum well intermixing (QWI) approach. The peak wavelengths of room temperature photoluminescence (PL) were 1520 nm, 1480 nm, and 1410 nm for the amplifier sections, modulator sections, and passive sections respectively after intermixing.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; photoluminescence; semiconductor quantum wells; 1410 nm; 1480 nm; 1520 nm; EA modulators; InGaAs-InAlGaAs; InGaAs/InAlGaAs multiple quantum well structure; amplifier sections; modulator sections; monolithic 2 /spl times/ 2 crosspoint switches; passive sections; quantum well intermixing; room temperature photoluminescence; Crosstalk; Fabrication; Indium gallium arsenide; Monolithic integrated circuits; Optical amplifiers; Optical switches; Photonic band gap; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947438
