Title :
High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure
Author :
Kondo, M. ; Sugii, N. ; Hoshino, Y. ; Hirasawa, W. ; Kimura, Y. ; Miyamoto, M. ; Fujioka, T. ; Kamohara, S. ; Kondo, Y. ; Kimura, S. ; Yoshida, I.
Author_Institution :
Adv. Analog Technol. Div., Renesas Technol. Corp., Gunma
Abstract :
We applied a strained-Si/relaxed-SiGe structure to LDMOSFETs in order to improve the power-added efficiency (PAE) of cellular handset RF power amplifier applications. Our LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed Si0.85Ge0.15 structure. Despite of appearance of misfit dislocations, the thick strained-Si was essential for the high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using a dynamic thermal simulation. The devices exhibited 46.7%-PAE at 27.5 dBm-Pout for WCDMA a handset application, which was improved by 4.0 point over Si controls
Keywords :
Ge-Si alloys; UHF power amplifiers; cellular radio; code division multiple access; dislocations; mobile handsets; power MOSFET; 70 nm; RF power amplifier; Si-SiGe; WCDMA; cellular handsets; dynamic thermal simulation; misfit dislocations; power RF LDMOSFET; self-heating effects; Electron mobility; Germanium silicon alloys; Laboratories; Radio frequency; Silicon germanium; Strain control; Telephone sets; Thermal conductivity; Thickness control; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609352
