Title :
InGaAs-InGaAlAs-InP 2.21 /spl mu/m diode lasers grown by MBE
Author :
Kuang, G.K. ; Bohm, G. ; Graf, N. ; Grau, M. ; Rosel, G. ; Meyer, R. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
Abstract :
Summary form only given. We report on InP-based strongly strained InGaAs-InGaAlAs quantum well (QW) lasers emitting at 2.21 /spl mu/m.The active region consists of two 8.2-nm thick strongly-strained In/sub 0.84/Ga/sub 0.16/As QWs surrounded by 20 nm thick lattice-matched InGaAs barriers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; 2.21 micron; In/sub 0.84/Ga/sub 0.16/As; In/sub 0.84/Ga/sub 0.16/As QW; InGaAs-InGaAlAs-InP; InGaAs-InGaAlAs-InP 2.21 /spl mu/m diode lasers; MBE growth; active region; lattice-matched InGaAs barriers; strongly strained InGaAs-InGaAlAs quantum well lasers; Cathodes; Chemical lasers; Diode lasers; Gas lasers; Laser theory; Optical pulses; Pulse measurements; Quantum well lasers; X-ray imaging; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947452
