Title :
A low on-resistance high voltage soi ligbt with oxide trench in drift region and hole bypass gate configuration
Author :
Lu, David Hongfei ; Jimbo, Shinichi ; Fujishima, Naoto
Author_Institution :
Fuji Electr. Adv. Technol. Co. Ltd., Nagano
Abstract :
This work reports a SOI LIGBT with hole-bypassing gate configuration and oxide trench in drift region that reduces the device pitch to approximately the half of the conventional LIGBTs. The device shows a specific on-resistance of 330 mOmegamiddotmm2 that reaches the silicon-limit at 200V breakdown voltage, at an effective gate drive of 4.0V and a current density of 1000A/cm2 . The proposed device can drastically improve the cost-performance of PDP scan driver ICs by replacing the conventional LIGBTs
Keywords :
insulated gate bipolar transistors; plasma displays; silicon-on-insulator; 200 V; 4.0 V; PDP scan driver IC; SOI LIGBT; device pitch; hole bypassing gate configuration; oxide trench; Breakdown voltage; Current density; Dielectric devices; Driver circuits; Electric breakdown; Flat panel displays; Insulation; Low voltage; Plasma displays; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609356
