An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power

Author

Kappeler, O. ; Quay, R. ; van Raay, F. ; Kiefer, R. ; Reiner, R. ; Walcher, H. ; Muller, S. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. ; Wiegner, D. ; Seyfried, U. ; Tempi, W.

Author_Institution

Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

385

Lastpage

386

Abstract

This work describes the operation of AlGaN/GaN HEMTs on s.i. SiC substrate in a broadband AlGaN/GaN push-pull amplifier for 3G/4G infrastructure applications between between 1.8 GHz and 2.2 GHz. The device yields linear gain of 12.9 dB, a 3 dB bandwidth of 400 MHz between 1.8 GHz and 2.2 GHz, and a maximum output power of 102 W at 1.95 GHz under single carrier 16 channel W-CDMA conditions. Linearity evaluation further yields a peak output power of 45 dBm for an ACLR of -45 dBc at 5 MHz offset at 1.95 GHz

Keywords

III-V semiconductors; UHF amplifiers; UHF field effect transistors; aluminium compounds; code division multiple access; differential amplifiers; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; 1.8 to 2.2 GHz; 100 W; 12.9 dB; 3G infrastructure; 400 MHz; 4G infrastructure; AlGaN-GaN-SiC; W-CDMA; linearity evaluation; push-pull HEMT amplifier; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Gain; Gallium nitride; HEMTs; Multiaccess communication; Power amplifiers; Power generation; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609357

Filename

1609357